Introductory Course on Magnetic Random Access Memory (5th edition)

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Grenoble, MINATEC/PHELMA, 2-4 July 2018

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memories called MRAMs (Magnetic Random Access Memories) based on magnetic tunnel junctions. These MRAM, and particularly the STT-MRAM (Spin-Transfer-Torque RAM) memories, are attracting an increasing interest in microelectronics industry. The launch of volume production of MRAM based products in 2018 has been announced by several major microelectronics foundries. This marks the acceptation of this new technology by industry.

The course will be organized during two and a half days. It will cover various aspects of MRAM technology: the basic spintronics phenomena involved in MRAM, the materials, the various categories of MRAM (pros/cons,performances, degree of maturity), comparison with other technologies of non-volatile memories (Phase Change RAM and Resistive RAM) in terms of working principle, performances, foreseen applications, the fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology.

The course language will be English. This will be the fifth edition of InMRAM. The four first editions were quite successful with an average of 80 attendees from all over the world, coming from both academic laboratories and companies. At the beginning of the course, each attendee will have the choice between two introductory tutorials (2nd July morning): one on magnetism (for attendees having no or little background in magnetism) and one on microelectronics (for those having no or little background in microelectronics). On the afternoon of the 3rd day (July 4th), each attendee will have the opportunity to either visit SPINTEC or attend a training on tools for the design of hybrid CMOS/magnetic circuits.

Details will be updated on the InMRAM website: